a d v a n c e d s e m i c o n d u c t o r, i n c. rev. c 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 1/2 specifications are subject to change without notice. characteristics t c = 25 c symbol none test conditions minimum typical maximum units bv cbo i c = 50 ma 65 v bv cer i c = 50 ma r be = 10 ? 65 v bv ebo i e = 1.0 ma 3.5 v i ces v ce = 50 v 100 ma h fe v ce = 5.0 v i c = 100 ma 10 200 --- c ob v cb = 28 v f = 1.0 mhz 80 pf p g c v cc = 40 v p out = 90 w f = 1025 - 1150 mhz p in = 13 w 8.4 35 db % pulse width = 10 sec, duty cycle = 1 % npn silicon rf power transistor avf100 description: the asi avf100 is a high power class-c transistor designed for iff/dme/tacan applications in 1025-1150 mhz. features: ? 50 v operation ? internal input/output matching networks ? p g = 8.4 db at 90 w/1090 mhz ? omnigold ? metalization system ? common base configuration maximum ratings i c 10 a v cbo 65 v v ces 65 v p diss 292 w @ t c = 25 c t j -65 c to +200 c t stg -65 c to +150 c jc 0.60 c/w package style .250 2l flg (b) order code: ASI10569 minimum inches / mm 1.050 / 26.67 .120 / 3.05 .245 / 6.22 .552 / 14.02 .790 / 20.07 b c d e f g a maximum .255 / 6.48 .572 / 14.53 .810 / 20.57 .140 / 3.56 inches / mm h .003 / 0.08 .007 / 0.18 dim k i j .052 / 1.32 .072 / 1.83 .130 / 3.30 .088 x 45 chamfer a b ? d e f g h i k c j .100 x 45 .095 / 2.41 .105 / 2.67 .285 / 7.24 .210 / 5.33 .120 / 3.05
a d v a n c e d s e m i c o n d u c t o r, i n c. rev. c 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 2/2 error! reference source not found. specifications are subject to change without notice. avf100 impedance data freq z in ( ? ) z cl ( ? ) 960 2.8 + j7.5 6.4 - j1.3 1050 3.9 + j8.2 5.8 - j1.4 1150 4.3 + j4.3 5.0 - j0.0 1215 4.9 + j4.3 4.8 - j0.0 p in = 13 w v ce = 50 v
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